SIHFP26N60L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFP26N60L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 470 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Encapsulados: TO-247AC
Búsqueda de reemplazo de SIHFP26N60L MOSFET
- Selecciónⓘ de transistores por parámetros
SIHFP26N60L datasheet
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp26n60l sihfp26n60l.pdf
IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfp264 sihfp264.pdf
IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl
sihfp264.pdf
IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl
Otros transistores... IRF820SPBF, SIHFP23N50L, SIHFP240, SIHFP244, SIHFP250, SIHFP254, SIHFP260, SIHFP264, IRF4905, SIHFP27N60K, SIHFP31N50L, SIHFP32N50K, SIHFP340, SIHFP350, SIHFP350LC, SIHFP360, SIHFP360LC
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: RM50P30DF | CRTT095N12N | CRSS028N10N | CRST030N10N | CRJQ80N65F | ASDM20N20KQ | ASDM20N100Q | ASDM12N65F | ASDM100R750PKQ | ASDM100R160NKQ | ASDM100R090NP | ASDM100R066NQ | ASDM100R045NQ | ASDM100N34KQ | ASDM100N15KQ | FTF30P35D
Popular searches
2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107 | 2n5457
