IRL641 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL641
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Id|ⓘ - Corriente continua
de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IRL641 MOSFET
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IRL641 datasheet
9.3. Size:941K international rectifier
irl640pbf.pdf 
PD - 94964 IRL640PbF Lead-Free 01/30/04 Document Number 91305 www.vishay.com 1 IRL640PbF Document Number 91305 www.vishay.com 2 IRL640PbF Document Number 91305 www.vishay.com 3 IRL640PbF Document Number 91305 www.vishay.com 4 IRL640PbF Document Number 91305 www.vishay.com 5 IRL640PbF Document Number 91305 www.vishay.com 6 IRL640PbF Document Number 91305 ww
9.4. Size:986K international rectifier
irl640spbf.pdf
PD- 95585 IRL640SPbF Lead-Free 07/20/04 Document Number 91306 www.vishay.com 1 IRL640SPbF Document Number 91306 www.vishay.com 2 IRL640SPbF Document Number 91306 www.vishay.com 3 IRL640SPbF Document Number 91306 www.vishay.com 4 IRL640SPbF Document Number 91306 www.vishay.com 5 IRL640SPbF Document Number 91306 www.vishay.com 6 IRL640SPbF Peak Diode Recovery
9.5. Size:226K fairchild semi
irl640a.pdf
IRL640A FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maxim
9.7. Size:881K samsung
irl640a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin
9.8. Size:1708K vishay
irl640pbf sihl640.pdf
IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si
9.9. Size:915K vishay
irl640s sihl640s.pdf
IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.18 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.0 Logic-Level Gate Drive Qgd (nC) 38 RDS(on) Specified at VGS = 4 V a
9.10. Size:1705K vishay
irl640 sihl640.pdf
IRL640, SiHL640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.18 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.0 Fast Switching Qgd (nC) 38 Ease of Paralleling Configuration Single Si
9.11. Size:892K onsemi
irl640a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRL621, IRL630, IRL630A, IRL630S, IRL631, IRL640, IRL640A, IRL640S, IRF830, IRLBA1304, IRLBA1304P, IRLBA3803, IRLBA3803P, 7N65L-TF3-T, IRLBL1304, IRLD014, IRLD024
