IRL641
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRL641
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16
A
Tjⓘ - Максимальная температура канала: 150
°C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.22
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
IRL641
Datasheet (PDF)
9.3. Size:941K international rectifier
irl640pbf.pdf 

PD - 94964IRL640PbF Lead-Free01/30/04Document Number: 91305 www.vishay.com1IRL640PbFDocument Number: 91305 www.vishay.com2IRL640PbFDocument Number: 91305 www.vishay.com3IRL640PbFDocument Number: 91305 www.vishay.com4IRL640PbFDocument Number: 91305 www.vishay.com5IRL640PbFDocument Number: 91305 www.vishay.com6IRL640PbFDocument Number: 91305 ww
9.4. Size:986K international rectifier
irl640spbf.pdf 

PD- 95585IRL640SPbF Lead-Free07/20/04Document Number: 91306 www.vishay.com1IRL640SPbFDocument Number: 91306 www.vishay.com2IRL640SPbFDocument Number: 91306 www.vishay.com3IRL640SPbFDocument Number: 91306 www.vishay.com4IRL640SPbFDocument Number: 91306 www.vishay.com5IRL640SPbFDocument Number: 91306 www.vishay.com6IRL640SPbFPeak Diode Recovery
9.5. Size:226K fairchild semi
irl640a.pdf 

IRL640AFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim
9.7. Size:881K samsung
irl640a.pdf 

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 18 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.145 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin
9.8. Size:1708K vishay
irl640pbf sihl640.pdf 

IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
9.9. Size:915K vishay
irl640s sihl640s.pdf 

IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
9.10. Size:1705K vishay
irl640 sihl640.pdf 

IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
9.11. Size:892K onsemi
irl640a.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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History: STD6N60M2
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