SIHFPC60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFPC60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 54 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO-247AC

 Búsqueda de reemplazo de SIHFPC60 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SIHFPC60 datasheet

 ..1. Size:2429K  vishay
irfpc60pbf sihfpc60.pdf pdf_icon

SIHFPC60

IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl

 ..2. Size:2423K  vishay
irfpc60 sihfpc60.pdf pdf_icon

SIHFPC60

IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl

 0.1. Size:658K  vishay
sihfpc60lc.pdf pdf_icon

SIHFPC60

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 120 Isolated Central Mounting Hole Qgs (nC) 29 Dynamic dV/dt Rated Qgd (nC) 48 Repetitive

 0.2. Size:653K  vishay
irfpc60lc sihfpc60lc.pdf pdf_icon

SIHFPC60

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 120 Isolated Central Mounting Hole Qgs (nC) 29 Dynamic dV/dt Rated Qgd (nC) 48 Repetitive

Otros transistores... SIHFP448, SIHFP460N, SIHFP9140, SIHFP9240, SIHFPC40, SIHFPC50, SIHFPC50A, SIHFPC50LC, NCEP15T14, SIHFPC60LC, SIHFPE30, SIHFPE40, SIHFPE50, SIHFPF30, SIHFPF40, SIHFPF50, SIHFPG30