SIHFPE30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFPE30

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO-247AC

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SIHFPE30 datasheet

 ..1. Size:1527K  vishay
sihfpe30.pdf pdf_icon

SIHFPE30

IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian

 ..2. Size:1520K  vishay
irfpe30 sihfpe30.pdf pdf_icon

SIHFPE30

IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian

 ..3. Size:1525K  infineon
irfpe30 sihfpe30.pdf pdf_icon

SIHFPE30

IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 9.6 Ease of Paralleling Qgd (nC) 45 Simple Drive Requirements Configuration Single Complian

 8.1. Size:1531K  vishay
sihfpe40.pdf pdf_icon

SIHFPE30

IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 130 COMPLIANT Fast Switching Qgs (nC) 17 Qgd (nC) 72 Ease of Paralleling Configuration Single Simple Drive Requirements D Complia

Otros transistores... SIHFP9140, SIHFP9240, SIHFPC40, SIHFPC50, SIHFPC50A, SIHFPC50LC, SIHFPC60, SIHFPC60LC, STP80NF70, SIHFPE40, SIHFPE50, SIHFPF30, SIHFPF40, SIHFPF50, SIHFPG30, SIHFPG40, SIHFPG50