SIHFPG40 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFPG40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: TO-247AC

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SIHFPG40 datasheet

 ..1. Size:1596K  vishay
irfpg40 sihfpg40.pdf pdf_icon

SIHFPG40

IRFPG40, SiHFPG40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.5 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 120 COMPLIANT Fast Switching Qgs (nC) 16 Qgd (nC) 65 Ease of Paralleling Configuration Single Simple Drive Requirements Complian

 ..2. Size:1602K  vishay
irfpg40pbf sihfpg40.pdf pdf_icon

SIHFPG40

IRFPG40, SiHFPG40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.5 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 120 COMPLIANT Fast Switching Qgs (nC) 16 Qgd (nC) 65 Ease of Paralleling Configuration Single Simple Drive Requirements Complian

 8.1. Size:1082K  vishay
irfpg50 sihfpg50.pdf pdf_icon

SIHFPG40

IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Isolated Central Mounting Hole Qg (Max.) (nC) 190 Fast Switching Qgs (nC) 23 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9

 8.2. Size:1088K  vishay
sihfpg50.pdf pdf_icon

SIHFPG40

IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Isolated Central Mounting Hole Qg (Max.) (nC) 190 Fast Switching Qgs (nC) 23 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9

Otros transistores... SIHFPC60LC, SIHFPE30, SIHFPE40, SIHFPE50, SIHFPF30, SIHFPF40, SIHFPF50, SIHFPG30, IRF1407, SIHFPG50, SIHFPS37N50A, SIHFPS38N60L, SIHFPS40N50L, SIHFPS40N60K, SIHFPS43N50K, SIHFR010, SIHFR014