SIHFPS37N50A Datasheet. Equivalente

 ..1. Size:178K  vishay
 sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 ..2. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 ..3. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 7.1. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 7.2. Size:187K  vishay
 irfps38n60l irfps38n60lpbf sihfps38n60l.pdf

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.1. Size:171K  vishay
 irfps43n50k irfps43n50kpbf sihfps43n50k.pdf

IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

 8.2. Size:187K  vishay
 irfps40n50l irfps40n50lpbf sihfps40n50l.pdf

IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.3. Size:178K  vishay
 irfps40n60k sihfps40n60k.pdf

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

 8.4. Size:185K  vishay
 irfps40n50l sihfps40n50l.pdf

IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.5. Size:170K  vishay
 irfps43n50k sihfps43n50k.pdf

IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

 8.6. Size:180K  vishay
 irfps40n60k irfps40n60kpbf sihfps40n60k.pdf

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current