SIHFPS37N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFPS37N50A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 446 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: SUPER-247
Búsqueda de reemplazo de SIHFPS37N50A MOSFET
SIHFPS37N50A Datasheet (PDF)
sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps37n50a sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps37n50a sihfps37n50a.pdf

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps38n60l sihfps38n60l.pdf

IRFPS38N60L, SiHFPS38N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.12RoHS* Lower Gate Charge Results in Simple DriveCOMPLIANTQg (Max.) (nC) 320 RequirementsQgs (nC) 85 Enhanced dV/dt Capabilities Offer ImprovedRuggedness
Otros transistores... SIHFPE40 , SIHFPE50 , SIHFPF30 , SIHFPF40 , SIHFPF50 , SIHFPG30 , SIHFPG40 , SIHFPG50 , STP80NF70 , SIHFPS38N60L , SIHFPS40N50L , SIHFPS40N60K , SIHFPS43N50K , SIHFR010 , SIHFR014 , SIHFR020 , SIHFR024 .
History: IPA50R500CE | AP2314GN
History: IPA50R500CE | AP2314GN



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