All MOSFET. SIHFPS37N50A Datasheet

 

SIHFPS37N50A Datasheet and Replacement


   Type Designator: SIHFPS37N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SUPER-247
 

 SIHFPS37N50A substitution

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SIHFPS37N50A Datasheet (PDF)

 ..1. Size:178K  vishay
 sihfps37n50a.pdf pdf_icon

SIHFPS37N50A

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

 ..2. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf pdf_icon

SIHFPS37N50A

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

 ..3. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf pdf_icon

SIHFPS37N50A

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

 7.1. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf pdf_icon

SIHFPS37N50A

IRFPS38N60L, SiHFPS38N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.12RoHS* Lower Gate Charge Results in Simple DriveCOMPLIANTQg (Max.) (nC) 320 RequirementsQgs (nC) 85 Enhanced dV/dt Capabilities Offer ImprovedRuggedness

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Datasheet: SIHFPE40 , SIHFPE50 , SIHFPF30 , SIHFPF40 , SIHFPF50 , SIHFPG30 , SIHFPG40 , SIHFPG50 , STP80NF70 , SIHFPS38N60L , SIHFPS40N50L , SIHFPS40N60K , SIHFPS43N50K , SIHFR010 , SIHFR014 , SIHFR020 , SIHFR024 .

Keywords - SIHFPS37N50A MOSFET datasheet

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 SIHFPS37N50A equivalent finder
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