SIHFPS38N60L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFPS38N60L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 540 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 740 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: SUPER-247
Búsqueda de reemplazo de SIHFPS38N60L MOSFET
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SIHFPS38N60L datasheet
irfps38n60l sihfps38n60l.pdf
IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps38n60l irfps38n60lpbf sihfps38n60l.pdf
IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness
sihfps37n50a.pdf
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur
irfps37n50a sihfps37n50a.pdf
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur
Otros transistores... SIHFPE50, SIHFPF30, SIHFPF40, SIHFPF50, SIHFPG30, SIHFPG40, SIHFPG50, SIHFPS37N50A, 5N60, SIHFPS40N50L, SIHFPS40N60K, SIHFPS43N50K, SIHFR010, SIHFR014, SIHFR020, SIHFR024, SIHFR110
History: SIHFPG50
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