SIHFR014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFR014
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO-252
- Selección de transistores por parámetros
SIHFR014 Datasheet (PDF)
irfr014 irfu014 sihfr014 sihfu014.pdf

IRFR014, IRFU014, SiHFR014, SiHFU014www.vishay.comVishay SiliconixPower MOSFETFEATURESD Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014)DPAK IPAK Straight lead (IRFU014, SiHFU014)(TO-252) (TO-251)D Available in tape and reelGDAvailable Fast switching Ease of parallelingSG SD Simple drive requirementsGS Material categor
irfr014pbf irfu014pbf sihfr014 sihfu014.pdf

IRFR014, IRFU014, SiHFR014, SiHFU014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014)Qgs (nC) 3.1 Available in Tape and ReelQgd (nC) 5.8 Fast Switching
irfr010 sihfr010.pdf

IRFR010, SiHFR010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of ParallelingQgs (nC) 2.6 Excellent Temperature StabilityQgd (nC) 4.8 Material categorization: For definitions of complianceplease see www.vishay.com/doc?
irfr010pbf sihfr010.pdf

IRFR010, SiHFR010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Drive CurrentVDS (V) 50 Surface MountRDS(on) ()VGS = 10 V 0.20 Fast SwitchingQg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature StabilityQgs (nC) 2.6 Compliant to RoHS Directive 2002/95/ECQgd (nC) 4.8Configuration Single DESCRIPTIONThe Power MOSFET technology i
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: BSS84KR
History: BSS84KR



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