SIHFR014 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFR014

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-252

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SIHFR014 datasheet

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 irfr014 irfu014 sihfr014 sihfu014.pdf pdf_icon

SIHFR014

IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014) DPAK IPAK Straight lead (IRFU014, SiHFU014) (TO-252) (TO-251) D Available in tape and reel G D Available Fast switching Ease of paralleling S G S D Simple drive requirements G S Material categor

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SIHFR014

IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014) Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014) Qgs (nC) 3.1 Available in Tape and Reel Qgd (nC) 5.8 Fast Switching

 7.1. Size:309K  vishay
 irfr010 sihfr010.pdf pdf_icon

SIHFR014

IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Qgs (nC) 2.6 Excellent Temperature Stability Qgd (nC) 4.8 Material categorization For definitions of compliance please see www.vishay.com/doc?

 7.2. Size:1696K  vishay
 irfr010pbf sihfr010.pdf pdf_icon

SIHFR014

IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgs (nC) 2.6 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 4.8 Configuration Single DESCRIPTION The Power MOSFET technology i

MOSTRAR MÁS

Otros transistores... SIHFPG40, SIHFPG50, SIHFPS37N50A, SIHFPS38N60L, SIHFPS40N50L, SIHFPS40N60K, SIHFPS43N50K, SIHFR010, 20N50, SIHFR020, SIHFR024, SIHFR110, SIHFR120, SIHFR1N60A, SIHFR210, SIHFR214, SIHFR220