SIHFR1N60A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFR1N60A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 32.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm

Encapsulados: TO-252

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SIHFR1N60A datasheet

 ..1. Size:244K  vishay
 irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

SIHFR1N60A

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

 ..2. Size:269K  vishay
 irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

SIHFR1N60A

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

 8.1. Size:2013K  vishay
 irfr120pbf irfu120pbf sihfr120 sihfu120.pdf pdf_icon

SIHFR1N60A

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q

 8.2. Size:1455K  vishay
 irfr110 sihfr110.pdf pdf_icon

SIHFR1N60A

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single

MOSTRAR MÁS

Otros transistores... SIHFPS40N60K, SIHFPS43N50K, SIHFR010, SIHFR014, SIHFR020, SIHFR024, SIHFR110, SIHFR120, 2N60, SIHFR210, SIHFR214, SIHFR220, SIHFR224, SIHFR310, SIHFR320, SIHFR420, SIHFR420A