SIHFR1N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFR1N60A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 32.6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: TO-252
- Selección de transistores por parámetros
SIHFR1N60A Datasheet (PDF)
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a sihfr1n60a sihfu1n60a.pdf

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfr120pbf irfu120pbf sihfr120 sihfu120.pdf

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ
irfr110 sihfr110.pdf

IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BSC014N06NS | WPM4801 | S68N08ZRN | AM30N10-70DE | UT20N03 | FDMS3660AS | KRF7343
History: BSC014N06NS | WPM4801 | S68N08ZRN | AM30N10-70DE | UT20N03 | FDMS3660AS | KRF7343



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