SIHFR1N60A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFR1N60A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 32.6 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
Тип корпуса: TO-252
Аналог (замена) для SIHFR1N60A
SIHFR1N60A Datasheet (PDF)
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing
irfr120pbf irfu120pbf sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ
irfr110 sihfr110.pdf
IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single
irfr120 irfu120 sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ
irfr110pbf sihfr110.pdf
IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918