SIHFS11N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHFS11N50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 52 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 208 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SIHFS11N50A

SIHFS11N50A Datasheet (PDF)

..1. Size:341K vishay
irfs11n50apbf sihfs11n50a.pdf

IRFS11N50A, SiHFS11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.52 Low Gate Charge Qg results in Simple DriveQg (Max.) (nC) 52RequirementQgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc

9.1. Size:225K vishay
irfs9n60a sihfs9n60a.pdf

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

9.2. Size:194K vishay
irfsl9n60a sihfsl9n60a.pdf

IRFSL9N60A, SiHFSL9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 49RequirementQgs (nC) 13 Improved Gate, Avalanche and DynamicQgd (nC) 20dV/dt RuggednessConfiguration Single Fully Characterized

9.3. Size:305K vishay
irfsl11n50a sihfsl11n50a.pdf

IRFSL11N50A, SiHFSL11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55 Fast SwitchingQg (Max.) (nC) 51 Ease of ParallelingQgs (nC) 12 Simple Drive RequirementsQgd (nC) 23 Compliant to RoHS Directive 2002/95/ECConfiguration SingleDESCRIPTIOND I2PAK

9.4. Size:307K vishay
irfsl11n50apbf sihfsl11n50a.pdf

9.5. Size:212K vishay
sihfs9n60a.pdf

IRFS9N60A, SiHFS9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 49 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 13RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanch

9.6. Size:196K vishay
irfsl9n60apbf sihfsl9n60a.pdf

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: