SIHFU110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFU110
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 81 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Encapsulados: TO-251
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SIHFU110 datasheet
irfu110 sihfu110.pdf
IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.54 Straight Lead Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Qgs (nC) 2.3 Repetitive Avalanche Rated Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Parallel
irfu110pbf sihfu110.pdf
IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 10 V 0.54 Straight Lead Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Qgs (nC) 2.3 Repetitive Avalanche Rated Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Parallel
irfr120pbf irfu120pbf sihfr120 sihfu120.pdf
IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q
irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing
Otros transistores... SIHFRC20, SIHFS11N50A, SIHFS9N60A, SIHFSL11N50A, SIHFSL9N60A, SIHFU014, SIHFU020, SIHFU024, 20N60, SIHFU120, SIHFU1N60A, SIHFU210, SIHFU214, SIHFU220, SIHFU224, SIHFU310, SIHFU320
History: GSM9971
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