SIHFZ14S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFZ14S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de SIHFZ14S MOSFET
SIHFZ14S Datasheet (PDF)
irfz14s irfz14l sihfz14s sihfz14l.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw
irfz14l irfz14s irfz14spbf sihfz14l sihfz14s.pdf

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S)Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating TemperatureQgs (nC) 3.1 Fast Sw
irfz14s sihfz14s sihfz14l.pdf

IRFZ14S, SiHFZ14S, SiHFZ14Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESD Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S)I2PAK (TO-262)D2PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switchingAvailableG Material categorization: for definitions ofcompliance please see www.vishay.c
irfz14 sihfz14.pdf

IRFZ14, SiHFZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.20RoHS* Fast SwitchingQg (Max.) (nC) 11 COMPLIANT Ease of ParallelingQgs (nC) 3.1Qgd (nC) 5.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
Otros transistores... SIHFU9210 , SIHFU9214 , SIHFU9220 , SIHFU9310 , SIHFUC20 , SIHFZ10 , SIHFZ14 , SIHFZ14L , K3569 , SIHFZ20 , SIHFZ24 , SIHFZ24S , SIHFZ34 , SIHFZ34L , SIHFZ34S , SIHFZ40 , SIHFZ44 .
History: CSD17310Q5A | IXFV52N30P | CS1N60C1H | NCE60NF160K | CSD16412Q5A | SIHFZ14 | IXFV36N50P
History: CSD17310Q5A | IXFV52N30P | CS1N60C1H | NCE60NF160K | CSD16412Q5A | SIHFZ14 | IXFV36N50P



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