SIHFZ48RS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHFZ48RS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 250 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO-263

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SIHFZ48RS Datasheet (PDF)

..1. Size:228K vishay
irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

..2. Size:203K vishay
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6.1. Size:1059K vishay
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IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

6.2. Size:1061K vishay
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7.1. Size:377K vishay
irfz48l irfz48s sihfz48l sihfz48s.pdf

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S)Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)Qgs (nC) 29 175 C Operating TemperatureQgd (nC)

7.2. Size:1517K vishay
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IRFZ48, SiHFZ48Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.018 RoHS* Ultra Low On-ResistanceCOMPLIANTQg (Max.) (nC) 110 Very Low Thermal ResistanceQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Fast SwitchingConfiguration Single E

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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