IRLD120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLD120
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Paquete / Cubierta: HD-1
Búsqueda de reemplazo de MOSFET IRLD120
IRLD120 Datasheet (PDF)
irld120pbf.pdf
PD-95979IRLD120PbF Lead-Free12/20/04Document Number: 91310 www.vishay.com1IRLD120PbFDocument Number: 91310 www.vishay.com2IRLD120PbFDocument Number: 91310 www.vishay.com3IRLD120PbFDocument Number: 91310 www.vishay.com4IRLD120PbFDocument Number: 91310 www.vishay.com5IRLD120PbFDocument Number: 91310 www.vishay.com6IRLD120PbFPeak Diode Recovery
irld120 sihld120.pdf
IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single
irld120pbf sihld120.pdf
IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single
irld110pbf.pdf
PD-95980IRLD110PbF Lead-Free12/20/04Document Number: 91309 www.vishay.com1IRLD110PbFDocument Number: 91309 www.vishay.com2IRLD110PbFDocument Number: 91309 www.vishay.com3IRLD110PbFDocument Number: 91309 www.vishay.com4IRLD110PbFDocument Number: 91309 www.vishay.com5IRLD110PbFDocument Number: 91309 www.vishay.com6IRLD110PbFPeak Diode Recovery
irld110 sihld110.pdf
IRLD110, SiHLD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 6.1COMPLIANT End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918