IRLD120
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLD120
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.3
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12(max)
nC
trⓘ - Rise Time: 64
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27
Ohm
Package: HD-1
IRLD120
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLD120
Datasheet (PDF)
..1. Size:1774K international rectifier
irld120pbf.pdf
PD-95979IRLD120PbF Lead-Free12/20/04Document Number: 91310 www.vishay.com1IRLD120PbFDocument Number: 91310 www.vishay.com2IRLD120PbFDocument Number: 91310 www.vishay.com3IRLD120PbFDocument Number: 91310 www.vishay.com4IRLD120PbFDocument Number: 91310 www.vishay.com5IRLD120PbFDocument Number: 91310 www.vishay.com6IRLD120PbFPeak Diode Recovery
..3. Size:1675K vishay
irld120 sihld120.pdf
IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single
..4. Size:1677K vishay
irld120pbf sihld120.pdf
IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single
9.1. Size:1765K international rectifier
irld110pbf.pdf
PD-95980IRLD110PbF Lead-Free12/20/04Document Number: 91309 www.vishay.com1IRLD110PbFDocument Number: 91309 www.vishay.com2IRLD110PbFDocument Number: 91309 www.vishay.com3IRLD110PbFDocument Number: 91309 www.vishay.com4IRLD110PbFDocument Number: 91309 www.vishay.com5IRLD110PbFDocument Number: 91309 www.vishay.com6IRLD110PbFPeak Diode Recovery
9.3. Size:1607K vishay
irld110 sihld110.pdf
IRLD110, SiHLD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 6.1COMPLIANT End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V
Datasheet: IRLBA1304P
, IRLBA3803
, IRLBA3803P
, 7N65L-TF3-T
, IRLBL1304
, IRLD014
, IRLD024
, IRLD110
, AO3407
, IRLI2203N
, IRLI2505
, IRLI2910
, IRLI3705N
, IRLI3803
, IRLI510A
, IRLI520A
, IRLI520N
.