SIHG16N50C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHG16N50C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 156 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-247AC

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SIHG16N50C datasheet

 ..1. Size:142K  vishay
 sihg16n50c.pdf pdf_icon

SIHG16N50C

SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET

 9.1. Size:178K  vishay
 sihg14n50d.pdf pdf_icon

SIHG16N50C

SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS)

 9.2. Size:187K  vishay
 sihg17n60d.pdf pdf_icon

SIHG16N50C

SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS

 9.3. Size:123K  vishay
 sihg17n80e.pdf pdf_icon

SIHG16N50C

SiHG17N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?99912 G N-Chann

MOSTRAR MÁS

Otros transistores... SIHFZ44S, SIHFZ48, SIHFZ48L, SIHFZ48R, SIHFZ48RL, SIHFZ48RS, SIHFZ48S, SIHG14N50D, CS150N03A8, SIHG17N60D, SIHG20N50C, SIHG20N50E, SIHG22N50D, SIHG22N60E, SIHG22N60S, SIHG22N65E, SIHG23N60E