SIHG16N50C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIHG16N50C Datasheet (PDF)

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SiHG16N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECDTO-247ACGSDGSN-Channel MOSFET

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SiHG14N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.4- Low Input Capacitance (Ciss)Qg (Max.) (nC) 58- Reduced Capacitive Switching LossesQgs (nC) 8- High Body Diode RuggednessQgd (nC) 14- Avalanche Energy Rated (UIS)

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SiHG17N60Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 650- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.340- Low Input Capacitance (Ciss)Qg (Max.) (nC) 90- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS

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SiHG17N80Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS)S Material categorization: for definitions of compliance DSplease see www.vishay.com/doc?99912GN-Chann

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