SIHG23N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHG23N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 227 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 63 nC
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 119 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.158 Ohm
Paquete / Cubierta: TO-247AC
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SIHG23N60E Datasheet (PDF)
sihg23n60e.pdf
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sihg20n50c.pdf
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