SIHG23N60E
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHG23N60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 227
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 63
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 119
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.158
Ohm
Package:
TO-247AC
SIHG23N60E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHG23N60E
Datasheet (PDF)
..1. Size:184K vishay
sihg23n60e.pdf 
SiHG23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16 Avalanche energy rated (UIS)Qgd (nC) 25
9.1. Size:182K vishay
sihg22n60e.pdf
SiHG22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11Available Avalanche energy rated (UIS)Qgd (
9.2. Size:185K vishay
sihg22n65e.pdf
SiHG22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab
9.3. Size:181K vishay
sihg20n50c.pdf
SiHG20N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 560DefinitionRDS(on) ()VGS = 10 V 0.270 Low Figure-of-Merit Ron x QgQg (Max.) (nC) 76 100 % Avalanche TestedQgs (nC) 21 High Peak Current CapabilityQgd (nC) 34 dV/dt RuggednessConfiguration Single Improved Trr/Qrr Imp
9.4. Size:180K vishay
sihg22n50d.pdf
SiHG22N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.230- Low Input Capacitance (Ciss)Qg max. (nC) 98- Reduced Capacitive Switching LossesQgs (nC) 13- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS)
9.5. Size:179K vishay
sihg24n65e.pdf
SiHG24N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced Switching and Conduction LossesQg max. (nC) 122 Ultra Low Gate Charge (Qg)Qgs (nC) 21 Avalanche Energy Rated (UIS)Qgd (nC) 37
9.6. Size:184K vishay
sihg22n60s.pdf
SiHG22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation oneVDS at TJ max. (V) 650 High EAR capabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower figure-of-merit Ron x QgQg max. (nC) 98 100 % avalanche testedQgs (nC) 17AvailableQgd (nC) 25 Ultra low RonConfiguration Single dV/dt ruggedness U
9.7. Size:179K vishay
sihg25n40d.pdf
SiHG25N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) at TJ max. 450DefinitionRDS(on) max. at 25 C () VGS = 10 V 0.17 Optimal DesignQg max. (nC) 88- Low Area Specific On-ResistanceQgs (nC) 12- Low Input Capacitance (Ciss)Qgd (nC) 23- Reduced Capacitive Switching LossesConf
9.8. Size:144K vishay
sihg28n65e.pdf
SiHG28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37
9.9. Size:176K vishay
sihg25n50e.pdf
SiHG25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config
9.10. Size:176K vishay
sihg28n60ef.pdf
SiHG28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc
9.11. Size:175K vishay
sihg20n50e.pdf
SiHG20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater
9.12. Size:376K inchange semiconductor
sihg20n50c.pdf
isc N-Channel MOSFET Transistor SIHG20N50CFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: WPB4002
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