SIHG23N60E PDF and Equivalents Search

 

SIHG23N60E PDF Specs and Replacement


   Type Designator: SIHG23N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.158 Ohm
   Package: TO-247AC
 

 SIHG23N60E substitution

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SIHG23N60E PDF Specs

 ..1. Size:184K  vishay
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SIHG23N60E

SiHG23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.158 Reduced switching and conduction losses Qg max. (nC) 95 Ultra low gate charge (Qg) Qgs (nC) 16 Avalanche energy rated (UIS) Qgd (nC) 25 ... See More ⇒

 9.1. Size:182K  vishay
sihg22n60e.pdf pdf_icon

SIHG23N60E

SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Available Avalanche energy rated (UIS) Qgd (... See More ⇒

 9.2. Size:185K  vishay
sihg22n65e.pdf pdf_icon

SIHG23N60E

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availab... See More ⇒

 9.3. Size:181K  vishay
sihg20n50c.pdf pdf_icon

SIHG23N60E

SiHG20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 560 Definition RDS(on) ( )VGS = 10 V 0.270 Low Figure-of-Merit Ron x Qg Qg (Max.) (nC) 76 100 % Avalanche Tested Qgs (nC) 21 High Peak Current Capability Qgd (nC) 34 dV/dt Ruggedness Configuration Single Improved Trr/Qrr Imp... See More ⇒

Detailed specifications: SIHG16N50C , SIHG17N60D , SIHG20N50C , SIHG20N50E , SIHG22N50D , SIHG22N60E , SIHG22N60S , SIHG22N65E , 4N60 , SIHG24N65E , SIHG25N40D , SIHG25N50E , SIHG28N60EF , SIHG28N65E , SIHG30N60E , SIHG32N50D , SIHG33N60E .

History: 2SK739

Keywords - SIHG23N60E MOSFET specs

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