SIHG47N60E Todos los transistores

SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.064 Reduced switching and conduction losses Qg max. (nC) 220 Ultra low gate charge (Qg) Qgs (nC) 29 Available Qgd (nC) 57 Avalanche energy ra

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 C ( ) VGS = 10 V 0.065 Reduced trr, Qrr, and IRRM Qg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Qgs (nC) 32 Increased r

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS (V) at TJ max. 650 Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.07 COMPLIANT 100 % Avalanche Tested Qg max. (nC) 216 Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 Ultra Low Ron Configuration Single Compliant to R

SiHG47N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com

isc N-Channel MOSFET Transistor SIHG47N60AEF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V