SIHG47N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SiHG47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced switching and conduction lossesQg max. (nC) 220 Ultra low gate charge (Qg)Qgs (nC) 29AvailableQgd (nC) 57 Avalanche energy ra

SiHG47N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650technologyRDS(on) max. at 25 C () VGS = 10 V 0.065 Reduced trr, Qrr, and IRRMQg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)Qgs (nC) 32 Increased r

SiHG47N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS (V) at TJ max. 650 Low Figure-of-Merit Ron x QgRoHS RDS(on) max. at 25 C () VGS = 10 V 0.07COMPLIANT 100 % Avalanche TestedQg max. (nC) 216 Ultra Low Gate ChargeQgs (nC) 39Qgd (nC) 57 Ultra Low RonConfiguration Single Compliant to R

SiHG47N60AEFwww.vishay.comVishay SiliconixEF Series Power MOSFET With Fast Body DiodeFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of complianceSDS please see www.vishay.com

isc N-Channel MOSFET Transistor SIHG47N60AEFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV