SIHG47N60S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHG47N60S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 417 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO-247AC

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SIHG47N60S datasheet

 ..1. Size:170K  vishay
 sihg47n60s.pdf pdf_icon

SIHG47N60S

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS (V) at TJ max. 650 Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.07 COMPLIANT 100 % Avalanche Tested Qg max. (nC) 216 Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 Ultra Low Ron Configuration Single Compliant to R

 5.1. Size:191K  vishay
 sihg47n60ef.pdf pdf_icon

SIHG47N60S

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 C ( ) VGS = 10 V 0.065 Reduced trr, Qrr, and IRRM Qg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Qgs (nC) 32 Increased r

 5.2. Size:171K  vishay
 sihg47n60aef.pdf pdf_icon

SIHG47N60S

SiHG47N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com

 5.3. Size:191K  vishay
 sihg47n60e.pdf pdf_icon

SIHG47N60S

SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.064 Reduced switching and conduction losses Qg max. (nC) 220 Ultra low gate charge (Qg) Qgs (nC) 29 Available Qgd (nC) 57 Avalanche energy ra

MOSTRAR MÁS

Otros transistores... SIHG28N65E, SIHG30N60E, SIHG32N50D, SIHG33N60E, SIHG33N60EF, SIHG460B, SIHG47N60E, SIHG47N60EF, STF13NM60N, SIHG47N65E, SIHG64N65E, SIHG73N60E, SIHH11N60E, SIHH14N60E, SIHH21N60E, SIHH26N60E, SIHL510