SIHG47N60S Specs and Replacement

Type Designator: SIHG47N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-247AC

SIHG47N60S substitution

- MOSFET ⓘ Cross-Reference Search

 

SIHG47N60S datasheet

 ..1. Size:170K  vishay
 sihg47n60s.pdf pdf_icon

SIHG47N60S

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS (V) at TJ max. 650 Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.07 COMPLIANT 100 % Avalanche Tested Qg max. (nC) 216 Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 Ultra Low Ron Configuration Single Compliant to R... See More ⇒

 5.1. Size:191K  vishay
 sihg47n60ef.pdf pdf_icon

SIHG47N60S

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 C ( ) VGS = 10 V 0.065 Reduced trr, Qrr, and IRRM Qg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Qgs (nC) 32 Increased r... See More ⇒

 5.2. Size:171K  vishay
 sihg47n60aef.pdf pdf_icon

SIHG47N60S

SiHG47N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com... See More ⇒

 5.3. Size:191K  vishay
 sihg47n60e.pdf pdf_icon

SIHG47N60S

SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.064 Reduced switching and conduction losses Qg max. (nC) 220 Ultra low gate charge (Qg) Qgs (nC) 29 Available Qgd (nC) 57 Avalanche energy ra... See More ⇒

SHOW MORE

Detailed specifications: SIHG28N65E, SIHG30N60E, SIHG32N50D, SIHG33N60E, SIHG33N60EF, SIHG460B, SIHG47N60E, SIHG47N60EF, STF13NM60N, SIHG47N65E, SIHG64N65E, SIHG73N60E, SIHH11N60E, SIHH14N60E, SIHH21N60E, SIHH26N60E, SIHL510

Keywords - SIHG47N60S MOSFET specs

 SIHG47N60S cross reference

 SIHG47N60S equivalent finder

 SIHG47N60S pdf lookup

 SIHG47N60S substitution

 SIHG47N60S replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.