SIHG47N65E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHG47N65E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 417 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 47 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 182 nC
Tiempo de subida (tr): 87 nS
Conductancia de drenaje-sustrato (Cd): 251 pF
Resistencia entre drenaje y fuente RDS(on): 0.072 Ohm
Paquete / Cubierta: TO-247AC
Búsqueda de reemplazo de MOSFET SIHG47N65E
SIHG47N65E Datasheet (PDF)
sihg47n65e.pdf
SiHG47N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.072 Reduced switching and conduction lossesQg max. (nC) 273 Ultra low gate charge (Qg)Qgs (nC) 46Qgd (nC) 79 Avalanche energy rated (UIS)Co
sihg47n60s.pdf
SiHG47N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS (V) at TJ max. 650 Low Figure-of-Merit Ron x QgRoHS RDS(on) max. at 25 C () VGS = 10 V 0.07COMPLIANT 100 % Avalanche TestedQg max. (nC) 216 Ultra Low Gate ChargeQgs (nC) 39Qgd (nC) 57 Ultra Low RonConfiguration Single Compliant to R
sihg47n60ef.pdf
SiHG47N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650technologyRDS(on) max. at 25 C () VGS = 10 V 0.065 Reduced trr, Qrr, and IRRMQg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)Qgs (nC) 32 Increased r
sihg47n60aef.pdf
SiHG47N60AEFwww.vishay.comVishay SiliconixEF Series Power MOSFET With Fast Body DiodeFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of complianceSDS please see www.vishay.com
sihg47n60e.pdf
SiHG47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced switching and conduction lossesQg max. (nC) 220 Ultra low gate charge (Qg)Qgs (nC) 29AvailableQgd (nC) 57 Avalanche energy ra
sihg47n60aef.pdf
isc N-Channel MOSFET Transistor SIHG47N60AEFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
