SIHG47N65E - параметры транзистора MOSFET, его аналоги, datasheet

SIHG47N65E Datasheet (PDF)

..1. Size:148K vishay
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SiHG47N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.072 Reduced switching and conduction lossesQg max. (nC) 273 Ultra low gate charge (Qg)Qgs (nC) 46Qgd (nC) 79 Avalanche energy rated (UIS)Co

6.1. Size:170K vishay
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SiHG47N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS (V) at TJ max. 650 Low Figure-of-Merit Ron x QgRoHS RDS(on) max. at 25 C () VGS = 10 V 0.07COMPLIANT 100 % Avalanche TestedQg max. (nC) 216 Ultra Low Gate ChargeQgs (nC) 39Qgd (nC) 57 Ultra Low RonConfiguration Single Compliant to R

6.2. Size:191K vishay
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SiHG47N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650technologyRDS(on) max. at 25 C () VGS = 10 V 0.065 Reduced trr, Qrr, and IRRMQg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)Qgs (nC) 32 Increased r

6.3. Size:171K vishay
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SiHG47N60AEFwww.vishay.comVishay SiliconixEF Series Power MOSFET With Fast Body DiodeFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of complianceSDS please see www.vishay.com