SIHL620 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHL620

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 5.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 91 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO-220AB

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SIHL620 datasheet

 ..1. Size:2119K  vishay
 irl620 sihl620.pdf pdf_icon

SIHL620

IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single

 ..2. Size:2122K  vishay
 irl620pbf sihl620.pdf pdf_icon

SIHL620

IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.80 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.7 Fast Switching Qgd (nC) 9.6 Ease of paralleling Configuration Single

 0.1. Size:2134K  vishay
 irl620s sihl620s.pdf pdf_icon

SIHL620

IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 200 Available Available in Tape and Reel RDS(on) ( )VGS = 10 V 0.80 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 16 Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 V Configuration Singl

 0.2. Size:1464K  vishay
 irl620spbf sihl620s.pdf pdf_icon

SIHL620

IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.9 Logic Level Gate Drive Qgd (nC) 9.6 RDS(on) Specified at VGS = 4 V

MOSTRAR MÁS

Otros transistores... SIHL510, SIHL510S, SIHL520, SIHL520L, SIHL530, SIHL530S, SIHL540, SIHL540S, IRFB7545, SIHL620S, SIHL630, SIHL630S, SIHL640, SIHL640S, SIHLD014, SIHLD024, SIHLD110