SIHL640 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHL640
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 66 nC
trⓘ - Tiempo de subida: 83 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SIHL640
SIHL640 Datasheet (PDF)
irl640pbf sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
irl640 sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
irl640s sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
irl630 sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
irl630s sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
irl630spbf sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
irl620s sihl620s.pdf
IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl
irl620 sihl620.pdf
IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
irl620spbf sihl620s.pdf
IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
irl630pbf sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
irl620pbf sihl620.pdf
IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
irl620s sihl620s 2.pdf
IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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