SIHL640 Datasheet and Replacement
Type Designator: SIHL640
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id| ⓘ - Maximum Drain Current: 17
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 66
nC
tr ⓘ - Rise Time: 83
nS
Cossⓘ -
Output Capacitance: 400
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO-220AB
-
MOSFET ⓘ Cross-Reference Search
SIHL640 Datasheet (PDF)
..1. Size:1708K vishay
irl640pbf sihl640.pdf 
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
..2. Size:1705K vishay
irl640 sihl640.pdf
IRL640, SiHL640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.18RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 66 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.0 Fast SwitchingQgd (nC) 38 Ease of ParallelingConfiguration Single Si
0.1. Size:915K vishay
irl640s sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
0.2. Size:917K vishay
sihl640s.pdf
IRL640S, SiHL640SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Surface MountRDS(on) ()VGS = 5 V 0.18 Available in Tape and ReelQg (Max.) (nC) 66 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.0 Logic-Level Gate DriveQgd (nC) 38 RDS(on) Specified at VGS = 4 V a
9.1. Size:2277K vishay
irl630 sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
9.2. Size:218K vishay
irl630s sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
9.3. Size:244K vishay
irl630spbf sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
9.4. Size:2134K vishay
irl620s sihl620s.pdf
IRL620S, SiHL620SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 200Available Available in Tape and ReelRDS(on) ()VGS = 10 V 0.80RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 16 Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Singl
9.5. Size:2119K vishay
irl620 sihl620.pdf
IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
9.6. Size:1464K vishay
irl620spbf sihl620s.pdf
IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
9.7. Size:2205K vishay
irl630pbf sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
9.8. Size:2122K vishay
irl620pbf sihl620.pdf
IRL620, SiHL620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.80 RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 16 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.7 Fast SwitchingQgd (nC) 9.6 Ease of parallelingConfiguration Single
9.9. Size:1439K vishay
irl620s sihl620s 2.pdf
IRL620S, SiHL620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and ReelQg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.9 Logic Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4 V
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, AON7506
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
Keywords - SIHL640 MOSFET datasheet
SIHL640 cross reference
SIHL640 equivalent finder
SIHL640 lookup
SIHL640 substitution
SIHL640 replacement
