SIHLD014 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHLD014

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: HVMDIP

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SIHLD014 datasheet

 ..1. Size:1724K  vishay
 irld014 sihld014.pdf pdf_icon

SIHLD014

IRLD014, SiHLD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 5 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate Drive Qgs (nC) 2.6 Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operating Temperature

 ..2. Size:1725K  vishay
 irld014pbf sihld014.pdf pdf_icon

SIHLD014

IRLD014, SiHLD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 5 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate Drive Qgs (nC) 2.6 Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operating Temperature

 8.1. Size:1694K  vishay
 sihld024.pdf pdf_icon

SIHLD014

IRLD024, SiHLD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 5.0 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 18 COMPLIANT Logic-Level Gate Drive Qgs (nC) 4.5 Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operating Temperature

 8.2. Size:1692K  vishay
 irld024 sihld024.pdf pdf_icon

SIHLD014

IRLD024, SiHLD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 5.0 V 0.10 RoHS* End Stackable Qg (Max.) (nC) 18 COMPLIANT Logic-Level Gate Drive Qgs (nC) 4.5 Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operating Temperature

MOSTRAR MÁS

Otros transistores... SIHL540, SIHL540S, SIHL620, SIHL620S, SIHL630, SIHL630S, SIHL640, SIHL640S, AOD4184A, SIHLD024, SIHLD110, SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G