SIHLD014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHLD014
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: HVMDIP

Búsqueda de reemplazo de MOSFET SIHLD014

SIHLD014 Datasheet (PDF)

..1. Size:1724K vishay
irld014 sihld014.pdf

IRLD014, SiHLD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5 V 0.20RoHS* End StackableQg (Max.) (nC) 8.4 COMPLIANT Logic-Level Gate DriveQgs (nC) 2.6Qgd (nC) 6.4 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

..2. Size:1725K vishay
irld014pbf sihld014.pdf

8.1. Size:1694K vishay
sihld024.pdf

IRLD024, SiHLD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 5.0 V 0.10RoHS* End StackableQg (Max.) (nC) 18COMPLIANT Logic-Level Gate DriveQgs (nC) 4.5Qgd (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single 175 C Operating Temperature

8.2. Size:1692K vishay
irld024 sihld024.pdf

9.1. Size:1624K vishay
sihld110.pdf

IRLD110, SiHLD110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54 For Automatic InsertionQg (Max.) (nC) 6.1 End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C

9.2. Size:1675K vishay
irld120 sihld120.pdf

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

9.3. Size:1607K vishay
irld110 sihld110.pdf

IRLD110, SiHLD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 6.1COMPLIANT End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V

9.4. Size:1677K vishay
irld120pbf sihld120.pdf

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