SIHLI520G Todos los transistores

 

SIHLI520G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHLI520G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 7.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 12 nC

Tiempo de elevación (tr): 64 nS

Conductancia de drenaje-sustrato (Cd): 150 pF

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO-220FP

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SIHLI520G Datasheet (PDF)

1.1. sihli520g.pdf Size:968K _upd-mosfet

SIHLI520G
SIHLI520G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = 5 V 0.27 RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 • Logic-Level Gate Drive Qgs (nC) 3.0 • RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.

1.2. irli520g sihli520g.pdf Size:967K _vishay

SIHLI520G
SIHLI520G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.1 Fast Swit

 4.1. sihli530g.pdf Size:1535K _upd-mosfet

SIHLI520G
SIHLI520G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14

4.2. sihli540g.pdf Size:1502K _upd-mosfet

SIHLI520G
SIHLI520G

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 • Logic-Level Gate Drive Qgd (nC) 27 • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching Configur

 4.3. irli530g sihli530g.pdf Size:1533K _vishay

SIHLI520G
SIHLI520G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14 Fast Switch

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