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SIHLI520G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SIHLI520G

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 37 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 7.2 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 12 nC

Время нарастания (tr): 64 ns

Выходная емкость (Cd): 150 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.27 Ohm

Тип корпуса: TO-220FP

Аналог (замена) для SIHLI520G

 

 

SIHLI520G Datasheet (PDF)

1.1. sihli520g.pdf Size:968K _upd-mosfet

SIHLI520G
SIHLI520G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = 5 V 0.27 RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 • Logic-Level Gate Drive Qgs (nC) 3.0 • RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.

1.2. irli520g sihli520g.pdf Size:967K _vishay

SIHLI520G
SIHLI520G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.1 Fast Swit

 4.1. sihli540g.pdf Size:1502K _upd-mosfet

SIHLI520G
SIHLI520G

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 • Logic-Level Gate Drive Qgd (nC) 27 • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching Configur

4.2. sihli530g.pdf Size:1535K _upd-mosfet

SIHLI520G
SIHLI520G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14

 4.3. irli530g sihli530g.pdf Size:1533K _vishay

SIHLI520G
SIHLI520G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14 Fast Switch

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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