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SIHLI530G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHLI530G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 9.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO-220FP
 

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SIHLI530G Datasheet (PDF)

 ..1. Size:1533K  vishay
 irli530g sihli530g.pdf pdf_icon

SIHLI530G

IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14

 ..2. Size:1535K  vishay
 irli530g irli530gpbf sihli530g.pdf pdf_icon

SIHLI530G

IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14

 8.1. Size:968K  vishay
 irli520g irli520gpbf sihli520g.pdf pdf_icon

SIHLI530G

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.

 8.2. Size:967K  vishay
 irli520g sihli520g.pdf pdf_icon

SIHLI530G

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.

MOSTRAR MÁS

Otros transistores... SIHL630S , SIHL640 , SIHL640S , SIHLD014 , SIHLD024 , SIHLD110 , SIHLD120 , SIHLI520G , BS170 , SIHLI540G , SIHLI620G , SIHLI630G , SIHLI640G , SIHLIZ14G , SIHLIZ24G , SIHLIZ34G , SIHLIZ44G .

History: 2SK1904 | FTA06N60C

 

 
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