SIHLI530G Specs and Replacement

Type Designator: SIHLI530G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-220FP

SIHLI530G substitution

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SIHLI530G datasheet

 ..1. Size:1533K  vishay
 irli530g sihli530g.pdf pdf_icon

SIHLI530G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14 ... See More ⇒

 ..2. Size:1535K  vishay
 irli530g irli530gpbf sihli530g.pdf pdf_icon

SIHLI530G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14 ... See More ⇒

 8.1. Size:968K  vishay
 irli520g irli520gpbf sihli520g.pdf pdf_icon

SIHLI530G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.... See More ⇒

 8.2. Size:967K  vishay
 irli520g sihli520g.pdf pdf_icon

SIHLI530G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.... See More ⇒

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Detailed specifications: SIHL630S, SIHL640, SIHL640S, SIHLD014, SIHLD024, SIHLD110, SIHLD120, SIHLI520G, IRF730, SIHLI540G, SIHLI620G, SIHLI630G, SIHLI640G, SIHLIZ14G, SIHLIZ24G, SIHLIZ34G, SIHLIZ44G

Keywords - SIHLI530G MOSFET specs

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