SIHLI640G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHLI640G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 9.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 66 nC
trⓘ - Tiempo de subida: 83 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de MOSFET SIHLI640G
SIHLI640G Datasheet (PDF)
irli640g sihli640g.pdf
IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38
irli640gpbf sihli640g.pdf
IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38
irli620g sihli620g.pdf
IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V
sihli620g.pdf
IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V
sihli630g.pdf
IRLI630G, SiHLI630GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.40f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 40 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V and 5V
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100