All MOSFET. SIHLI640G Datasheet

 

SIHLI640G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHLI640G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 9.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220FP

 SIHLI640G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHLI640G Datasheet (PDF)

 ..1. Size:1706K  vishay
 irli640g sihli640g.pdf

SIHLI640G SIHLI640G

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 ..2. Size:1708K  vishay
 irli640gpbf sihli640g.pdf

SIHLI640G SIHLI640G

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 8.1. Size:1895K  vishay
 irli620g sihli620g.pdf

SIHLI640G SIHLI640G

IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V

 8.2. Size:1897K  vishay
 sihli620g.pdf

SIHLI640G SIHLI640G

IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V

 8.3. Size:1683K  vishay
 sihli630g.pdf

SIHLI640G SIHLI640G

IRLI630G, SiHLI630GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.40f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 40 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V and 5V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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