All MOSFET. SIHLI640G Datasheet

 

SIHLI640G Datasheet and Replacement


   Type Designator: SIHLI640G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 9.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220FP
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SIHLI640G Datasheet (PDF)

 ..1. Size:1706K  vishay
 irli640g sihli640g.pdf pdf_icon

SIHLI640G

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 ..2. Size:1708K  vishay
 irli640gpbf sihli640g.pdf pdf_icon

SIHLI640G

IRLI640G, SiHLI640GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.18f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 66 Logic-Level Gate DriveQgs (nC) 9.0 RDS(on) Specified at VGS = 4V and 5 VQgd (nC) 38

 8.1. Size:1895K  vishay
 irli620g sihli620g.pdf pdf_icon

SIHLI640G

IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V

 8.2. Size:1897K  vishay
 sihli620g.pdf pdf_icon

SIHLI640G

IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - SIHLI640G MOSFET datasheet

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