SIHLI640G Specs and Replacement

Type Designator: SIHLI640G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 9.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220FP

SIHLI640G substitution

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SIHLI640G datasheet

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Detailed specifications: SIHLD024, SIHLD110, SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G, IRF840, SIHLIZ14G, SIHLIZ24G, SIHLIZ34G, SIHLIZ44G, SIHLL014, SIHLL110, SIHLR014, SIHLR024

Keywords - SIHLI640G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.