SIHLIZ44G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHLIZ44G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 230 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO-220FP

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SIHLIZ44G datasheet

 ..1. Size:1741K  vishay
sihliz44g.pdf pdf_icon

SIHLIZ44G

IRLIZ44G, SiHLIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 5 V 0.028 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 66 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 12 Logic-Level Gate Drive Qgd (nC) 43 RDS(on) Specified at VGS = 4 V and 5 V Configurat

 8.1. Size:1637K  vishay
irliz34g sihliz34g.pdf pdf_icon

SIHLIZ44G

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 8.2. Size:1637K  vishay
irliz14g sihliz14g.pdf pdf_icon

SIHLIZ44G

IRLIZ14G, SiHLIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.20 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive Qgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 6.

 8.3. Size:1638K  vishay
irliz34gpbf sihliz34g.pdf pdf_icon

SIHLIZ44G

IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 Logic-Level Gate Drive Qgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

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