All MOSFET. SIHLIZ44G Datasheet

 

SIHLIZ44G Datasheet and Replacement


   Type Designator: SIHLIZ44G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO-220FP
      - MOSFET Cross-Reference Search

 

SIHLIZ44G Datasheet (PDF)

 ..1. Size:1741K  vishay
 sihliz44g.pdf pdf_icon

SIHLIZ44G

IRLIZ44G, SiHLIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 5 V 0.028f = 60 Hz)COMPLIANT Qg (Max.) (nC) 66 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 12 Logic-Level Gate DriveQgd (nC) 43 RDS(on) Specified at VGS = 4 V and 5 VConfigurat

 8.1. Size:1637K  vishay
 irliz34g sihliz34g.pdf pdf_icon

SIHLIZ44G

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

 8.2. Size:1637K  vishay
 irliz14g sihliz14g.pdf pdf_icon

SIHLIZ44G

IRLIZ14G, SiHLIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.20f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 8.4 Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate DriveQgs (nC) 3.5 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 6.

 8.3. Size:1638K  vishay
 irliz34gpbf sihliz34g.pdf pdf_icon

SIHLIZ44G

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - SIHLIZ44G MOSFET datasheet

 SIHLIZ44G cross reference
 SIHLIZ44G equivalent finder
 SIHLIZ44G lookup
 SIHLIZ44G substitution
 SIHLIZ44G replacement

 

 
Back to Top

 


 
.