SIHLR110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHLR110
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 6.1 nC
   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
   Paquete / Cubierta: TO-252

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SIHLR110 Datasheet (PDF)

..1. Size:2150K vishay
irlr110 irlu110 irlr110pbf irlu110pbf sihlr110 sihlu110.pdf

IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i

..2. Size:2125K vishay
irlr110 irlu110 sihlr110 sihlu110.pdf

8.1. Size:2396K vishay
irlr120 irlu120 sihlr120 sihlu120.pdf

IRLR120, IRLU120, SiHLR120, SiHLU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5.0 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120)Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120)Qgd (nC) 7.1 Available in

9.1. Size:2163K vishay
irlr014 irlu014 sihlr014 sihlu014.pdf

IRLR014, IRLU014, SiHLR014, SiHLU014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR014/SiHLR014)RDS(on) ()VGS = 5.0 V 0.20RoHS* Straight Lead (IRLU014/SiHLU014)Qg (Max.) (nC) 8.4COMPLIANTQgs (nC) 3.5 Available in Tape and ReelQgd (nC) 6.0 Logic-Level Gate DriveConfiguration Singl

9.2. Size:1198K vishay
irlr024 irlu024 sihlr024 sihlu024.pdf

IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR024/SiHLR024)RDS(on) ()VGS = 5.0 V 0.10RoHS* Straight Lead (IRLU024/SiHLU024)Qg (Max.) (nC) 18COMPLIANT Available in Tape and ReelQgs (nC) 4.5Qgd (nC) 12 Logic-Level Gate DriveConfiguration Single

9.3. Size:809K vishay
sihlr014 sihlu014.pdf

IRLR014, IRLU014, SiHLR014, SiHLU014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Surface Mount (IRLR014, SiHLR014)RDS(on) ()VGS = 5.0 V 0.20 Straight Lead (IRLU014, SiHLU014)Qg (Max.) (nC) 8.4 Available in Tape and ReelQgs (nC) 3.5 Logic-Level Gate DriveQgd (nC) 6.0 RDS(on) Specified at VGS

9.4. Size:459K vishay
sihlr024 sihlu024.pdf

IRLR024, IRLU024, SiHLR024, SiHLU024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 Surface mount (IRLR024, SiHLR024)RDS(on) ()VGS = 5.0 V 0.10 Straight lead (IRLU024, SiHLU024)Qg (Max.) (nC) 18 Available in tape and reelQgs (nC) 4.5Available Logic-level gate driveQgd (nC) 12 RDS(on) specifie

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