SIHLR110 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHLR110
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 25 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 4.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.1 nC
Время нарастания (tr): 47 ns
Выходная емкость (Cd): 80 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.54 Ohm
Тип корпуса: TO-252
SIHLR110 Datasheet (PDF)
irlr110 irlu110 irlr110pbf irlu110pbf sihlr110 sihlu110.pdf
IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i
irlr110 irlu110 sihlr110 sihlu110.pdf
IRLR110, IRLU110, SiHLR110, SiHLU110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 5.0 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110)Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110)Qgd (nC) 3.3 Available i
irlr120 irlu120 sihlr120 sihlu120.pdf
IRLR120, IRLU120, SiHLR120, SiHLU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5.0 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120)Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120)Qgd (nC) 7.1 Available in
irlr014 irlu014 sihlr014 sihlu014.pdf
IRLR014, IRLU014, SiHLR014, SiHLU014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR014/SiHLR014)RDS(on) ()VGS = 5.0 V 0.20RoHS* Straight Lead (IRLU014/SiHLU014)Qg (Max.) (nC) 8.4COMPLIANTQgs (nC) 3.5 Available in Tape and ReelQgd (nC) 6.0 Logic-Level Gate DriveConfiguration Singl
irlr024 irlu024 sihlr024 sihlu024.pdf
IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR024/SiHLR024)RDS(on) ()VGS = 5.0 V 0.10RoHS* Straight Lead (IRLU024/SiHLU024)Qg (Max.) (nC) 18COMPLIANT Available in Tape and ReelQgs (nC) 4.5Qgd (nC) 12 Logic-Level Gate DriveConfiguration Single
sihlr014 sihlu014.pdf
IRLR014, IRLU014, SiHLR014, SiHLU014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Surface Mount (IRLR014, SiHLR014)RDS(on) ()VGS = 5.0 V 0.20 Straight Lead (IRLU014, SiHLU014)Qg (Max.) (nC) 8.4 Available in Tape and ReelQgs (nC) 3.5 Logic-Level Gate DriveQgd (nC) 6.0 RDS(on) Specified at VGS
sihlr024 sihlu024.pdf
IRLR024, IRLU024, SiHLR024, SiHLU024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 Surface mount (IRLR024, SiHLR024)RDS(on) ()VGS = 5.0 V 0.10 Straight lead (IRLU024, SiHLU024)Qg (Max.) (nC) 18 Available in tape and reelQgs (nC) 4.5Available Logic-level gate driveQgd (nC) 12 RDS(on) specifie
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