SIHLZ34S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHLZ34S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 88 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 170 nS
Cossⓘ - Capacitancia de salida: 660 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de SIHLZ34S MOSFET
- Selecciónⓘ de transistores por parámetros
SIHLZ34S datasheet
..1. Size:367K vishay
irlz34l irlz34s sihlz34l sihlz34s.pdf 
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S) Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) Qgs (nC) 7.1 175 C Operating Temperature Fast Sw
7.1. Size:1531K vishay
irlz34 sihlz34.pdf 
IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single
7.2. Size:1533K vishay
irlz34pbf sihlz34.pdf 
IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single
9.1. Size:436K vishay
irlz44s irlz44spbf sihlz44s.pdf 
IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating
9.2. Size:1736K vishay
irlz44 sihlz44.pdf 
IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si
9.3. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf 
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
9.4. Size:1738K vishay
irlz44pbf sihlz44.pdf 
IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si
9.5. Size:1747K vishay
irlz24pbf irlz24 sihlz24.pdf 
IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single
9.6. Size:1744K vishay
irlz24 sihlz24.pdf 
IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single
9.7. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf 
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
9.8. Size:308K vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf 
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12
9.9. Size:334K vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf 
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12
9.10. Size:1084K vishay
irlz14 sihlz14.pdf 
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D
9.11. Size:411K vishay
irlz44s sihlz44s.pdf 
IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating
9.12. Size:1086K vishay
irlz14pbf sihlz14.pdf 
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D
Otros transistores... SIHLZ14, SIHLZ14L, SIHLZ14S, SIHLZ24, SIHLZ24L, SIHLZ24S, SIHLZ34, SIHLZ34L, 8205A, SIHLZ44, SIHLZ44S, SIHP10N40D, SIHP12N50C, SIHP12N50E, SIHP12N60E, SIHP12N65E, SIHP14N50D