SIHLZ34S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHLZ34S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 35 nC
trⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 660 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO-263
SIHLZ34S Datasheet (PDF)
irlz34l irlz34s sihlz34l sihlz34s.pdf
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S)Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)Qgs (nC) 7.1 175 C Operating Temperature Fast Sw
irlz34 sihlz34.pdf
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
irlz34pbf sihlz34.pdf
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
irlz44s irlz44spbf sihlz44s.pdf
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
irlz44 sihlz44.pdf
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
irlz14spbf sihlz14l sihlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
irlz44pbf sihlz44.pdf
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
irlz24pbf irlz24 sihlz24.pdf
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
irlz24 sihlz24.pdf
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
irlz14s irlz14l sihlz14s sihlz14l.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
irlz24s irlz24l sihlz24s sihlz24l.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
irlz14 sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
irlz44s sihlz44s.pdf
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
irlz14pbf sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918