SIHLZ44S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHLZ44S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 230 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO-263

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SIHLZ44S datasheet

 ..1. Size:436K  vishay
irlz44s irlz44spbf sihlz44s.pdf pdf_icon

SIHLZ44S

IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating

 ..2. Size:411K  vishay
irlz44s sihlz44s.pdf pdf_icon

SIHLZ44S

IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating

 7.1. Size:1736K  vishay
irlz44 sihlz44.pdf pdf_icon

SIHLZ44S

IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si

 7.2. Size:1738K  vishay
irlz44pbf sihlz44.pdf pdf_icon

SIHLZ44S

IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si

Otros transistores... SIHLZ14S, SIHLZ24, SIHLZ24L, SIHLZ24S, SIHLZ34, SIHLZ34L, SIHLZ34S, SIHLZ44, IRFP250N, SIHP10N40D, SIHP12N50C, SIHP12N50E, SIHP12N60E, SIHP12N65E, SIHP14N50D, SIHP15N50E, SIHP15N60E