SIHP12N50C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHP12N50C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.555 Ohm

Encapsulados: TO-220AB

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SIHP12N50C datasheet

 ..1. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SIHP12N50C

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

 ..2. Size:179K  vishay
 sihb12n50c sihf12n50c sihp12n50c.pdf pdf_icon

SIHP12N50C

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

 5.1. Size:158K  vishay
 sihp12n50e.pdf pdf_icon

SIHP12N50C

SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.380 Reduced switching and conduction losses Qg max. (nC) 50 Low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 10 Materi

 7.1. Size:167K  vishay
 sihp12n65e.pdf pdf_icon

SIHP12N50C

SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M

MOSTRAR MÁS

Otros transistores... SIHLZ24L, SIHLZ24S, SIHLZ34, SIHLZ34L, SIHLZ34S, SIHLZ44, SIHLZ44S, SIHP10N40D, IRF9540, SIHP12N50E, SIHP12N60E, SIHP12N65E, SIHP14N50D, SIHP15N50E, SIHP15N60E, SIHP15N65E, SIHP16N50C