IRLI520N Todos los transistores

 

IRLI520N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLI520N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 7.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 13.3 nC

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TO220

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IRLI520N Datasheet (PDF)

1.1. irli520npbf.pdf Size:1059K _upd

IRLI520N
IRLI520N

PD - 95049 IRLI520NPbF • Lead-Free www.irf.com 1 2/25/04 IRLI520NPbF 2 www.irf.com IRLI520NPbF www.irf.com 3 IRLI520NPbF 4 www.irf.com IRLI520NPbF www.irf.com 5 IRLI520NPbF 6 www.irf.com IRLI520NPbF www.irf.com 7 IRLI520NPbF 8 www.irf.com IRLI520NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Informat

1.2. irli520n.pdf Size:146K _international_rectifier

IRLI520N
IRLI520N

PD - 9.1496A IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID =8.1A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e

 3.1. irli520g irli520gpbf.pdf Size:968K _upd

IRLI520N
IRLI520N

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = 5 V 0.27 RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 • Logic-Level Gate Drive Qgs (nC) 3.0 • RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.

3.2. irli520g.pdf Size:158K _international_rectifier

IRLI520N
IRLI520N

Document Number: 90397 www.vishay.com 1379 Document Number: 90397 www.vishay.com 1380 Document Number: 90397 www.vishay.com 1381 Document Number: 90397 www.vishay.com 1382 Document Number: 90397 www.vishay.com 1383 Document Number: 90397 www.vishay.com 1384 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

 3.3. irli520g sihli520g.pdf Size:967K _vishay

IRLI520N
IRLI520N

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.1 Fast Swit

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