All MOSFET. IRLI520N Datasheet

 

IRLI520N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLI520N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 8.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 20(max) nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F

 IRLI520N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLI520N Datasheet (PDF)

 ..1. Size:1059K  international rectifier
 irli520npbf.pdf

IRLI520N IRLI520N

PD - 95049IRLI520NPbF Lead-Freewww.irf.com 12/25/04IRLI520NPbF2 www.irf.comIRLI520NPbFwww.irf.com 3IRLI520NPbF4 www.irf.comIRLI520NPbFwww.irf.com 5IRLI520NPbF6 www.irf.comIRLI520NPbFwww.irf.com 7IRLI520NPbF8 www.irf.comIRLI520NPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking Informat

 ..2. Size:146K  international rectifier
 irli520n.pdf

IRLI520N IRLI520N

PD - 9.1496AIRLI520NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.18 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID =8.1ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

 ..3. Size:611K  infineon
 irli520npbf.pdf

IRLI520N IRLI520N

IRLI520NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 100V High Voltage Isolation = 2.5KVRMS RDS(on) 0.18 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 8.1A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

 7.1. Size:165K  1
 irli520a irlw520a.pdf

IRLI520N IRLI520N

 7.2. Size:158K  international rectifier
 irli520g.pdf

IRLI520N IRLI520N

Document Number: 90397 www.vishay.com1379Document Number: 90397 www.vishay.com1380Document Number: 90397 www.vishay.com1381Document Number: 90397 www.vishay.com1382Document Number: 90397 www.vishay.com1383Document Number: 90397 www.vishay.com1384Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

 7.3. Size:968K  vishay
 irli520g irli520gpbf sihli520g.pdf

IRLI520N IRLI520N

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.

 7.4. Size:967K  vishay
 irli520g sihli520g.pdf

IRLI520N IRLI520N

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.

Datasheet: IRLD120 , IRLI2203N , IRLI2505 , IRLI2910 , IRLI3705N , IRLI3803 , IRLI510A , IRLI520A , 20N60 , IRLI530A , IRLI530N , IRLI540A , IRLI540N , IRLI610A , IRLI620A , IRLI620G , IRLI630A .

 

 
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