SIHP14N50D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHP14N50D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 14
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27
nS
Cossⓘ - Capacitancia
de salida: 100
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4
Ohm
Paquete / Cubierta:
TO-220AB
Búsqueda de reemplazo de SIHP14N50D MOSFET
-
Selección ⓘ de transistores por parámetros
SIHP14N50D PDF Specs
..1. Size:208K vishay
sihp14n50d.pdf 
SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg max. (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS) Co... See More ⇒
9.1. Size:292K vishay
sihp16n50c sihb16n50c sihf16n50c.pdf
SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
9.2. Size:219K vishay
sihp17n60d.pdf
SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS... See More ⇒
9.3. Size:167K vishay
sihp12n65e.pdf
SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 70 Ultra low gate charge (Qg) Qgs (nC) 9 Avalanche energy rated (UIS) Qgd (nC) 16 M... See More ⇒
9.4. Size:207K vishay
sihp15n60e.pdf
SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17 ... See More ⇒
9.5. Size:158K vishay
sihp15n50e.pdf
SiHP15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.243 Reduced switching and conduction losses Qg max. (nC) 66 Low gate charge (Qg) Qgs (nC) 8 Avalanche energy rated (UIS) Qgd (nC) 14 Materi... See More ⇒
9.6. Size:210K vishay
sihp12n60e.pdf
SiHP12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced Switching and Conduction Losses Qg max. (nC) 58 Ultra Low Gate Charge (Qg) Qgs (nC) 6 Avalanche Energy Rated (UIS) Qgd (nC) 13 ... See More ⇒
9.7. Size:247K vishay
sihp18n50c.pdf
SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 100 % Avalanche Tested RDS(on) ( )VGS = 10 V 0.225 High Peak Current Capability Qg (Max.) (nC) 76 dV/dt Ruggedness Qgs (nC) 21 Qgd (nC) 29 Improved trr/Qrr Configuration Single Improved Gate Charge D High Power Dissipations Capabilit... See More ⇒
9.8. Size:154K vishay
sihp12n50c sihb12n50c sihf12n50c.pdf
SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK ... See More ⇒
9.9. Size:158K vishay
sihp12n50e.pdf
SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.380 Reduced switching and conduction losses Qg max. (nC) 50 Low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 10 Materi... See More ⇒
9.10. Size:179K vishay
sihb12n50c sihf12n50c sihp12n50c.pdf
SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.555 100 % Avalanche Tested Qg (Max.) (nC) 48 Gate Charge Improved Qgs (nC) 12 Trr/Qrr Improved Qgd (nC) 15 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK ... See More ⇒
9.11. Size:124K vishay
sihp120n60e.pdf
SiHP120N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D 4th generation E series technology TO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) G Reduced switching and conduction losses Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?999... See More ⇒
9.12. Size:165K vishay
sihp15n65e.pdf
SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U... See More ⇒
9.13. Size:125K vishay
sihp11n80e.pdf
SiHP11N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-220AB Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S G please see www.vishay.com/doc?99912 N-Chann... See More ⇒
9.14. Size:211K vishay
sihp10n40d.pdf
SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con... See More ⇒
9.15. Size:125K vishay
sihp17n80e.pdf
SiHP17N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-220AB Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com/doc?99912 G N-Chann... See More ⇒
9.16. Size:175K vishay
sihb16n50c sihf16n50c sihp16n50c.pdf
SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
Otros transistores... SIHLZ34S
, SIHLZ44
, SIHLZ44S
, SIHP10N40D
, SIHP12N50C
, SIHP12N50E
, SIHP12N60E
, SIHP12N65E
, 2N7002
, SIHP15N50E
, SIHP15N60E
, SIHP15N65E
, SIHP16N50C
, SIHP17N60D
, SIHP18N50C
, SIHP20N50E
, SIHP22N60E
.
