SIHP14N50D Datasheet. Specs and Replacement
Type Designator: SIHP14N50D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V
Qg ⓘ - Total Gate Charge: 29 nC
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220AB
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SIHP14N50D datasheet
..1. Size:208K vishay
sihp14n50d.pdf 
SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.4 - Low Input Capacitance (Ciss) Qg max. (nC) 58 - Reduced Capacitive Switching Losses Qgs (nC) 8 - High Body Diode Ruggedness Qgd (nC) 14 - Avalanche Energy Rated (UIS) Co... See More ⇒
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Detailed specifications: SIHLZ34S, SIHLZ44, SIHLZ44S, SIHP10N40D, SIHP12N50C, SIHP12N50E, SIHP12N60E, SIHP12N65E, 2N7002, SIHP15N50E, SIHP15N60E, SIHP15N65E, SIHP16N50C, SIHP17N60D, SIHP18N50C, SIHP20N50E, SIHP22N60E
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