SIHP15N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHP15N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 15
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 51
nS
Cossⓘ - Capacitancia
de salida: 70
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28
Ohm
Paquete / Cubierta:
TO-220AB
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SIHP15N60E PDF Specs
..1. Size:207K vishay
sihp15n60e.pdf 
SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17 ... See More ⇒
6.1. Size:165K vishay
sihp15n65e.pdf
SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U... See More ⇒
7.1. Size:158K vishay
sihp15n50e.pdf
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9.1. Size:292K vishay
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SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
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sihp17n60d.pdf
SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 650 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.340 - Low Input Capacitance (Ciss) Qg (Max.) (nC) 90 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS... See More ⇒
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9.4. Size:210K vishay
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9.6. Size:154K vishay
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Otros transistores... SIHLZ44S
, SIHP10N40D
, SIHP12N50C
, SIHP12N50E
, SIHP12N60E
, SIHP12N65E
, SIHP14N50D
, SIHP15N50E
, IRF4905
, SIHP15N65E
, SIHP16N50C
, SIHP17N60D
, SIHP18N50C
, SIHP20N50E
, SIHP22N60E
, SIHP22N60S
, SIHP22N65E
.
History: SIHLI520G
