SIHP15N60E Datasheet. Specs and Replacement
Type Designator: SIHP15N60E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 38 nC
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220AB
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SIHP15N60E datasheet
..1. Size:207K vishay
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SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced Switching and Conduction Losses Qg max. (nC) 76 Ultra Low Gate Charge (Qg) Qgs (nC) 11 Avalanche Energy Rated (UIS) Qgd (nC) 17 ... See More ⇒
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Detailed specifications: SIHLZ44S, SIHP10N40D, SIHP12N50C, SIHP12N50E, SIHP12N60E, SIHP12N65E, SIHP14N50D, SIHP15N50E, IRF4905, SIHP15N65E, SIHP16N50C, SIHP17N60D, SIHP18N50C, SIHP20N50E, SIHP22N60E, SIHP22N60S, SIHP22N65E
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